发明名称 Apparatus for evaluating quality of crystal, and method and apparatus for manufacturing semiconductor light-emitting device including the apparatus
摘要 An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device.
申请公布号 US9334582(B2) 申请公布日期 2016.05.10
申请号 US201514602447 申请日期 2015.01.22
申请人 Samsung Electronics Co., Ltd. 发明人 Seo Jong-uk;Kim Byoung-kyun;Yoon Suk-ho;Lee Keon-hun;Lee Kee-won;Rhee Do-young;Lee Sang-don
分类号 H01L21/66;C30B25/08;H01L33/06;G01N21/95;H01L21/02;H01L33/00 主分类号 H01L21/66
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A method of manufacturing a semiconductor light-emitting device, the method comprising: growing a wafer so that a surface feature is formed in one or more layers of the wafer for the semiconductor light-emitting device, the wafer including a first conductive layer, an active layer, and a second conductive layer; measuring a surface reflectance of one or more of the first conductive layer, the active layer, and the second conductive layer of the wafer using an optical device during the growing of the wafer; and evaluating a quality of crystal by calculating a difference of the measured surface reflectance over a time interval and by calculating a threading dislocation density of the wafer.
地址 Gyeonggi-do KR