| 发明名称 | Beam-induced deposition of low-resistivity material | ||
| 摘要 | An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 μΩ·cm. | ||
| 申请公布号 | US9334568(B2) | 申请公布日期 | 2016.05.10 |
| 申请号 | US201514799397 | 申请日期 | 2015.07.14 |
| 申请人 | FEI Company | 发明人 | Randolph Steven;Chandler Clive D. |
| 分类号 | H05H1/24;C23C16/48;C23C16/18;H01L21/285;H01L21/768 | 主分类号 | H05H1/24 |
| 代理机构 | Scheinberg & Associates, P.C. | 代理人 | Scheinberg & Associates, P.C. ;Scheinberg Michael O. |
| 主权项 | 1. A method of depositing a low resistivity material onto a substrate, the method comprising: directing a precursor gas comprising a methylated or ethylated tin toward a surface of the substrate; irradiating the surface of the substrate with an ion beam in the presence of the precursor gas, the precursor gas dissociating in the presence of the ion beam to deposit a material on the surface of the substrate; wherein the deposited material contains tin dissociated from the precursor gas and has a resistivity of 50 μΩ·cm or lower upon deposition. | ||
| 地址 | Hillsboro OR US | ||