Powder, sintered body and sputtering target, each containing elements of Cu, In, Ga and Se, and method for producing the powder

摘要

The present invention provides a Cu—In—Ga—Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu—In—Ga—Se compound and/or a Cu—In—Se compound in an amount of 60 mass % or more in total. The powder of the present invention preferably contains an In—Se compound in an amount of 20 mass % or less and/or a Cu—In compound in an amount of 20 mass % or less.

主权项

1. A method for producing a powder comprising Cu, In, Ga, and Se, the powder comprising 60 mass % or more in total of a Cu—In—Ga—Se compound, a Cu—In—Se compound, or both, the method comprising:
atomizing a molten metal of a Cu-based alloy comprising In and Ga to obtain a powder (1) comprising In, Ga, and Cu; mixing a Se powder with the powder (1) to obtain a mixed powder(2); heat-treating the mixed powder (2) at a heat treatment temperature of 500° C. -1,000° C. to obtain a reactant (3) comprising the Cu—In—Ga—Se compound, the Cu—In—Se compound, or both; and pulverizing the reactant(3) obtain the powder comprising Cu, In, Ga, and Se.