Semiconductor devices and methods of manufacturing the same

摘要

Semiconductor devices and methods of manufacturing the same are disclosed. The semiconductor device a gate dielectric pattern on a substrate and a gate electrode on the gate dielectric pattern opposite the substrate. The gate electrode includes a first conductive pattern disposed on the gate dielectric pattern and including aluminum, and a second conductive pattern disposed between the first conductive pattern and the gate dielectric pattern. The second conductive pattern has an aluminum concentration that is higher than an aluminum concentration of the first conductive pattern. The second conductive pattern may be thicker than the first conductive pattern.

主权项

1. A semiconductor device comprising:
a gate dielectric pattern on a substrate; and a gate electrode on the gate dielectric pattern opposite the substrate, wherein the gate electrode comprises: a first conductive pattern on the gate dielectric pattern, the first conductive pattern comprising aluminum; a second conductive pattern disposed between the first conductive pattern and the gate dielectric pattern, the second conductive pattern comprising aluminum and having an aluminum concentration that is higher than an aluminum concentration of the first conductive pattern; and a third conductive pattern on the first conductive pattern; and a barrier pattern between the first conductive pattern and the third conductive pattern, wherein the first conductive pattern is disposed between the second conductive pattern and the third conductive pattern; and wherein the barrier pattern comprises titanium (Ti), tantalum (Ta), tungsten (W), ruthenium (Ru), niobium (Nb), molybdenum (Mo), hafnium (Hf), lanthanum (La), or any combination thereof.