Non-volatile memory device

摘要

A non-volatile memory device includes an isolation layer formed over a substrate to define an active region, a floating gate formed over the substrate, a selection gate formed over the substrate on one side of the floating gate and formed to be adjacent to the floating gate with a first gap from the floating gate, a control plug formed over the isolation layer on the other side of the floating gate and formed to be adjacent to the floating gate with a second gap from the floating gate, and a charge blocking layer formed to gap-fill the first gap and the second gap.

主权项

1. A non-volatile memory device, comprising:
an isolation layer formed over a substrate to define an active region; a floating gate formed over the substrate; a selection gate formed over the substrate on one side of the floating gate and formed to be adjacent to the floating gate with a first gap from the floating gate; a control plug formed over the isolation layer on the other side of the floating gate and formed to be adjacent to the floating gate with a second gap from the floating gate; and a charge blocking layer formed to gap-fill the first gap and the second gap, wherein the control plug and the selection gate receive a same bias voltage, and the floating gate is coupled with the control plug and the selection gate, in response to the same bias voltage being applied to the control plug and the selection gate.