Planar semiconductor growth on III-V material

摘要

A semiconductor structure includes a III-V monocrystalline layer and a germanium surface layer. An interlayer is formed directly between the III-V monocrystalline layer and the germanium surface layer from a material selected to provide stronger nucleation bonding between the interlayer and the germanium surface layer than nucleation bonding that would be achievable directly between the III-V monocrystalline layer and the germanium surface layer such that a continuous, relatively defect-free germanium surface layer is provided.

主权项

1. A method for fabricating a semiconductor structure, comprising:
forming a doped source and drain region for a device from a III-V monocrystalline layer, wherein a semiconductor substrate is positioned beneath the III-V monocrystalline layer; simultaneously removing impurities from the III-V monocrystalline layer and the semiconductor substrate; forming an interlayer directly on the III-V monocrystalline layer over the source and drain regions from a material; growing a crystalline germanium surface layer directly on the interlayer to form a source and drain extension for the respective source and drain regions of the device, such that a continuous, relatively defect-free germanium surface layer is provided; and forming a gate stack on the III-V monocrystalline layer after the simultaneously removing of impurities from the III-V monocrystalline layer and the semiconductor substrate.