| 发明名称 |
Shallow trench isolation in bulk substrate |
| 摘要 |
The semiconductor structure includes a plurality of first insulators in a substrate, a common insulating layer surrounding the sidewall and the bottom of said first insulators in said substrate, and suspended portions of said substrate on said common insulating layer. |
| 申请公布号 |
US9337260(B2) |
申请公布日期 |
2016.05.10 |
| 申请号 |
US201414549559 |
申请日期 |
2014.11.21 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Liou En-Chiuan;Tsao Po-Chao;Liang Chia-Jui;Wu Jia-Rong |
| 分类号 |
H01L29/06;H01L27/088;H01L21/762;H01L21/8234 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor structure, comprising:
a plurality of first insulators in a bulk substrate; a common insulating layer surrounding the sidewall and the bottom of said first insulators in said bulk substrate; and projected portions of said bulk substrate being directly and totally on top surface of said common insulating layer. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
