Semiconductor device and manufacturing method thereof

摘要

A backside illumination semiconductor image sensing device includes a semiconductor substrate. The semiconductor substrate includes a radiation sensitive diode and a peripheral region. The peripheral region is proximal to a sidewall of the backside illumination semiconductor image sensing device. The backside illumination semiconductor image sensing device further includes a first anti reflective coating (ARC) on a backside of the semiconductor substrate and a dielectric layer on the first anti reflective coating. Additionally, a radiation shielding layer is disposed on the dielectric layer. Moreover, the backside illumination semiconductor image sensing device has a photon blocking layer on the sidewall of the backside illumination semiconductor image sensing device. The at least a portion of a sidewall of the radiation shielding layer is not covered by the photon blocking layer and the photon blocking layer is configured to block photons penetrating into the semiconductor substrate.

主权项

1. A backside illumination (BSI) semiconductor image sensing device, comprising:
a semiconductor substrate including an image sensing pixel region and an adjacent peripheral region, wherein the peripheral region is proximal to a sidewall of the backside illumination semiconductor image sensing device; a first anti reflective coating (ARC) on a backside of the semiconductor substrate; a dielectric layer on the first anti reflective coating; a radiation shielding layer on the dielectric layer in the peripheral region; and a photon blocking layer on the sidewall of the backside illumination semiconductor image sensing device and covering a portion of a sidewall of the radiation shielding layer while contacting with the sidewall of the radiation shielding layer, the sidewall of the radiation shielding layer not abutting the dielectric layer and forming a corner with the dielectric layer, and the photon blocking layer being configured to block photons penetrating into the semiconductor substrate; wherein an end of the photon blocking layer includes an arc.