Semiconductor device and method of manufacturing the same

摘要

A semiconductor memory device includes a first substrate on which a cell region is defined. In the cell region, memory cells are stacked. A second substrate is located above the first substrate, and a peripheral region is defined on the second substrate. One or more conductive lines are located in the peripheral region. The one or more lines extend through the second substrate and couple to the cell region.

主权项

1. A semiconductor memory device, comprising:
a first substrate on which a cell region is defined; a memory string located at the cell region and including at least one drain selection transistor, a number of memory cells, and at least one source selection transistor that are coupled in series with each other, wherein the memory cells are stacked on top of one another; first contact plugs coupled to the at least one drain selection transistor, the memory cells and the at least one source selection transistor; a first interlayer insulating layer located above the first substrate including the memory string; a second interlayer insulating layer located above the first interlayer insulating layer; a second substrate located above the second interlayer insulating layer, wherein a peripheral region is defined on the second substrate; first conductive lines coupled to the first contact plugs and located under the second substrate; second conductive lines located above the second substrate; and second contact plugs passing through the first interlayer insulating layer, the second interlayer insulating layer and the second substrate to couple the first conductive lines and the second conductive lines to each other.