| 发明名称 | Semiconductor device and a method for manufacturing a semiconductor device having a semi-insulating region | ||
| 摘要 | A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body including a diode-structure with a pn-junction, and an edge-termination structure arranged in a peripheral area of the semiconductor body. The edge-termination structure includes an insulating region partially arranged in the semiconductor body adjacent the pn-junction and a semi-insulating region arranged on the insulating region and spaced apart from the semiconductor body. The semi-insulating region forms a resistor connected in parallel with the diode-structure. | ||
| 申请公布号 | US9337186(B2) | 申请公布日期 | 2016.05.10 |
| 申请号 | US201414503749 | 申请日期 | 2014.10.01 |
| 申请人 | Infineon Technologies AG | 发明人 | Schmidt Gerhard;Schloegl Daniel |
| 分类号 | H01L29/06;H01L27/06;H01L29/66;H01L29/861 | 主分类号 | H01L29/06 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor body comprising a diode-structure with a pn-junction; and an edge-termination structure arranged in a peripheral area of the semiconductor body, the edge-termination structure comprising: an insulating region partially arranged in the semiconductor body adjacent the pn-junction; anda semi-insulating region arranged on the insulating region and spaced apart from the semiconductor body, the semi-insulating region forming a resistor connected in parallel with the diode-structure,wherein the resistor has a resistance higher than about 1 kOhm. | ||
| 地址 | Neubiberg DE | ||