Method for repairing damages to sidewalls of an ultra-low dielectric constant film

摘要

A method for repairing damages to sidewalls of an ultra-low dielectric constant film is disclosed by the present invention comprises the following steps: depositing an ultra-low dielectric constant film on an semiconductor substrate; dry-etching the ultra-low dielectric constant film to form a sidewall structure thereof; performing wet cleaning by using a chemical agent containing an unsaturated hydrocarbon having —O—C(Re)x; and performing ultraviolet curing. The present invention can restore pores size and porosity of the ultra-low dielectric constant film, and to keep effective dielectric constant to a minimum.

主权项

1. A method for repairing damages to sidewalls of an ultra-low dielectric constant film comprises the following steps:
step S01: depositing an ultra-low dielectric constant film on a semiconductor substrate, wherein the ultra-low dielectric constant film is a carbon-doped porous silicon oxide film; step S02: dry-etching the ultra-low dielectric constant film to form a sidewall structure in the ultra-low dielectric constant film, wherein Si—C bonds of the carbon-doped porous silicon oxide film at the sidewall structure are broken during the dry-etching process; step S03: performing wet cleaning by using a chemical agent containing an unsaturated hydrocarbon having —O—C(Re)x; the unsaturated hydrocarbon having —O—C(Re)x replaces C of the broken Si—C bonds and combines with Si of the broken Si—C bonds to form Si—O—C(Re)x, wherein the C(Re)x is a molecular formula of an unsaturated hydrocarbon having —CH3; and step S04: performing ultraviolet curing to break O—C bonds of the Si—O—C(Re)x, so as to form an annular SixOy(CH3)z compound having a backbone made of Si—O—Si, wherein x, y and z are all positive integers.