The present invention relates to a hall sensor with an improved doping profile which has the maximum doping density in a sensing area at a depth of 0.7 - 2μm from the surface of a semiconductor substrate. According to the present invention, as a current flow channel is placed at a distance from the surface of the semiconductor substrate, the noise characteristics can be improved and even if a less amount of current than existing hall sensors is supplied the same level of sensing capacity can be maintained.
