| 发明名称 |
Packaged RF amplifier devices and methods of manufacture thereof |
| 摘要 |
An embodiment of a packaged radio frequency (RF) device includes a device substrate with a voltage reference plane, a first input lead coupled to the device substrate, a first output lead coupled to the device substrate, a first transistor die coupled to a top surface of the device substrate with a solder bond, a second die coupled to the top surface of the device substrate with a conductive epoxy that electrically couples at least one component of the second die to the voltage reference plane, and non-conductive molding compound over the top surface of the device substrate and encompassing the first transistor die, the second die, a portion of the first input lead, and a portion of the first output lead. |
| 申请公布号 |
US9337774(B2) |
申请公布日期 |
2016.05.10 |
| 申请号 |
US201414491574 |
申请日期 |
2014.09.19 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
Szymanowski Margaret A.;Mahalingam L. M.;Musa Sarmad K.;Santos Fernando A.;White Jerry L. |
| 分类号 |
H01L23/66;H03F1/02;H01L21/56;H01L25/065;H03F1/42;H03F3/19;H03F3/21;H01L23/64 |
主分类号 |
H01L23/66 |
| 代理机构 |
|
代理人 |
Schumm Sherry W. |
| 主权项 |
1. A packaged radio frequency (RF) amplifier device comprising:
a device substrate that includes a voltage reference plane; a first input lead coupled to the device substrate; a first output lead coupled to the device substrate; a first transistor die coupled to a top surface of the device substrate with a solder bond; a second die coupled to the top surface of the device substrate with a conductive epoxy that electrically couples at least one component of the second die to the voltage reference plane; and non-conductive molding compound over the top surface of the device substrate and encompassing the first transistor die, the second die, a portion of the first input lead, and a portion of the first output lead. |
| 地址 |
Austin TX US |
