发明名称 Ion implantation device
摘要 The disclosed ion implantation apparatus has a vacuum chamber 11, a roller electrode 13 having a portion of an outer circumferential part on which a film 3 is wound, voltage application unit 23 for applying a voltage to the roller electrode, and a gas introduction unit having a gas supply outlet for supplying an ion implantation gas into the vacuum chamber, wherein the gas introduction unit and a gas discharge outlet are disposed so as to be opposite each other along the axial direction of the roller electrode, the roller electrode intervening therebetween.
申请公布号 US9336991(B2) 申请公布日期 2016.05.10
申请号 US201314420377 申请日期 2013.09.12
申请人 LINTEC Corporation 发明人 Naganawa Satoshi;Goto Daisuke;Kenmochi Suguru
分类号 H01J37/30;H01J37/317;C23C14/48;H05H1/46;H01J37/32;C23C14/56;H05H1/48 主分类号 H01J37/30
代理机构 Young & Thompson 代理人 Young & Thompson
主权项 1. An ion implantation apparatus comprises: a vacuum chamber, a roller electrode having a portion of an outer circumferential part on which a film is wound, voltage application means for applying a voltage to the roller electrode, a gas introduction unit having a gas supply outlet for supplying an ion implantation gas into the vacuum chamber, and a gas discharge outlet for discharging the gas present in the gas introduction unit and in the vacuum chamber, wherein the gas introduction unit and the gas discharge outlet are disposed so as to be opposite each other along the axial direction of the roller electrode, the roller electrode intervening therebetween, the gas introduction unit is disposed so as to be separated from the roller electrode and be opposite a peripheral portion of an axial end of the roller electrode, and the gas supply outlets provided in the gas introduction unit are disposed so as to be opposite a peripheral portion of an axial end of the roller electrode.
地址 Tokyo JP