| 摘要 |
FIELD: electronic equipment.SUBSTANCE: invention relates to infrared optoelectronic engineering and is intended for selective absorption and heat emission detection. Heat absorber of electromagnetic radiation is a three-layer plane-parallel thin-film semimetal (semiconductor)-dielectric-metal structure. Thickness of third layer should be sufficient to almost completely reflect radiation. Thickness of first and second layer is selected to satisfy condition of low-frequency resonance absorption, wherein for wave reflected from first boundary of structure, and wave passing through structure, reflected and exiting in reverse direction, phases are shifted by 180°, pair of thickness of which satisfy first condition should be selected a single pair, for which not only phases of said waves are opposite, and amplitudes are equal, wherein resonance reflection equals zero, and materials of first and second layers of structure must be selected so that at zero reflection thickness of first layer is as small as possible, thus providing maximum absorption bandwidth for given pair of materials.EFFECT: technical result is increased efficiency of reception of heat radiation by means of absorber, optimised on frequency and frequency band.1 cl, 1 tbl, 5 dwg |
