Compact distributed bragg reflectors

摘要

Ultra compact DBRs, VCSELs incorporating the DBRs and methods for making the DBRs are provided. The DBRs are composed of a vertical reflector stack comprising a plurality of adjacent layer pairs, wherein each layer pair includes a layer of single-crystalline Group IV semiconductor and an adjacent layer of silicon dioxide.

主权项

1. A distributed Bragg reflector comprising:
a reflector stack comprising at least two adjacent layer pairs, each layer pair comprising:
a layer of a single-crystalline Group IV semiconductor having a surface; andan adjacent layer of silicon dioxide having a surface; wherein the surface of the layer of single-crystalline Group IV semiconductor and the surface of the adjacent layer of silicon dioxide form an interface between the layer of single-crystalline Group IV semiconductor and the adjacent layer of silicon dioxide; wherein the thickness of the reflector stack is no greater than 1 μm; the root mean square roughness of the interface formed by the layer of single-crystalline Group IV semiconductor and the layer of silicon dioxide of the first of the at least two adjacent layer pairs is no greater than 0.5 nm; and the root mean square roughness of the interface formed by the layer of single-crystalline Group IV semiconductor and the layer of silicon dioxide of the second of the at least two adjacent layer pairs is no greater than 0.5 nm.