Silicon-containing EUV resist underlayer film forming composition

摘要

A resist underlayer film forming composition for EUV lithography, comprising: as a silane, a hydrolyzable silane, a hydrolyzate of the hydrolyzable silane, a hydrolysis condensate of the hydrolyzable silane, or a mixture of any of the hydrolyzable silane, the hydrolyzate, and the hydrolysis condensate, wherein the hydrolyzable silane includes a combination of tetramethoxysilane, an alkyltrimethoxysilane, and an aryltrialkoxysilane, and the aryltrialkoxysilane is represented by formula (1):
(R2)n2—R1—(CH2)n1—Si(X)3  Formula (1);In formula (1), R1 is an aromatic ring consisting of a benzene ring or a naphthalene ring or a ring including an isocyanuric acid structure, R2 is a substituent replacing a hydrogen atom on the aromatic ring and is a halogen atom or a C1-10 alkoxy group, and X is a C1-10 alkoxy group, a C2-10 acyloxy group, or a halogen group.

主权项

1. A resist underlayer film forming composition for EUV lithography, comprising:
as a silane, a hydrolyzable silane, a hydrolyzate of the hydrolyzable silane, a hydrolysis condensate of the hydrolyzable silane, or a mixture of any of the hydrolyzable silane, the hydrolyzate, and the hydrolysis condensate, wherein the hydrolyzable silane consisting of a combination of tetramethoxysilane, an alkyltrimethoxysilane, and an aryltrialkoxysilane, the aryltrialkoxysilane is represented by formula (1):
(R2)n2—R1—(CH2)n1—Si(X)3  Formula (1)(in formula (1), R1 is an aromatic ring consisting of a benzene ring or a naphthalene ring or a ring including an isocyanuric acid structure, R2 is a substituent replacing a hydrogen atom on the aromatic ring and is a halogen atom or a C1-10 alkoxy group, and X is a C1-10 alkoxy group, a C2-10 acyloxy group, or a halogen group; and n1 is an integer of 0 or 1, and n2 is an integer of 1 to 5 for the benzene ring or an integer of 1 to 9 for the naphthalene ring), and
the hydrolyzable silane includes 10 to 35 mol of the alkyltrimethoxysilane and 2 to 25 mol of the aryltrialkoxysilane relative to 70 mol of tetramethoxysilane.