3D VERTICAL COMPLEMENTARY RESISTIVE SWITCHING MEMORY DEVICE BASED ON MULTI-LAYER MATRIX

摘要

Provided is a complementary resistive switching memory device with a three-dimensional crossbar-point vertical multiplayer structure. The three-dimensional complementary resistive switching memory device includes: a conductive filler; a plurality of complementary resistive switching memory unit devices which are placed at a distance from each other; and a plurality of word electrode lines which are in contact with the outer circumferential surface of the complementary resistive switching memory unit devices and are placed while crossing with the conductive filler. Each complementary resistive switching memory unit device includes: a first oxide semiconductor membrane which surrounds the outer circumferential surface of the conductive filler; a conductive membrane which surrounds the first oxide semiconductor membrane; and a second oxide semiconductor membrane which surrounds the conductive membrane. Therefore, by applying a three dimensional complementary resistive switching (CRS) device as a unit device, the present invention provides a resistance-variable memory device with a CRS-based three-dimensional crossbar-point vertical structure which can perform efficient writing and reading without a selective device.