发明名称 Switch circuit, mass spectrometer, and control method for switch circuit
摘要 To provide a switch circuit in which ON/OFF control can be realized even in a state where high voltage is not applied, and high voltage can be completely lowered to the ground.;Provided is a switch circuit that includes plural MOS switches connected in series in such a manner that the source of one element is connected to the drain of another between high voltage and a system ground and that switches a connection state between the high voltage and the system ground, the switch circuit including: a MOS switch 101 the source of which is connected to the system ground among the plural MOS switches; a MOS switch 102 the source of which is connected to the drain of the MOS switch 101 in a shared manner and the drain of which is connected to the high voltage side among the plural MOS switches; a MOS switch 103 the drain of which is connected to the gate of the MOS switch 102 in a shared manner; and a resistor 104 that is connected in parallel between the gate and the source of the MOS switch 102.
申请公布号 US9337822(B2) 申请公布日期 2016.05.10
申请号 US201314390096 申请日期 2013.04.01
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 Kadoi Ryo;Sugiyama Yoshikazu
分类号 H03K17/10;H03K17/687;H01J49/02 主分类号 H03K17/10
代理机构 Baker Botts L.L.P. 代理人 Baker Botts L.L.P.
主权项 1. A switch circuit that includes plural transistor elements connected in series in such a manner that the source of one element is connected to the drain of another between high voltage and a system ground and that switches a connection state between the high voltage and the system ground, the switch circuit comprising: a first transistor element the source of which is connected to the system ground among the plural transistor elements; a second transistor element the source of which is connected to the drain of the first transistor element in a shared manner and the drain of which is connected to the high voltage side among the plural transistor elements; a third transistor element the drain of which is connected to the gate of the second transistor element in a shared manner; and a resistor element that is connected in parallel between the gate and the source of the second transistor element, wherein: voltage enough to turn on the second transistor element is applied to the source of the third transistor element when the source of the second transistor element is the system ground; the first transistor element and the third transistor element are turned off to turn off the second transistor element, so that the high voltage is disconnected from the system ground; and the first transistor element and the third transistor element are turned on to turn on the second transistor element, so that the high voltage is connected to the system ground.
地址 Tokyo JP