Method for manufacturing semiconductor light emitting device

摘要

The method for manufacturing the semiconductor light emitting device includes steps of forming a plurality of semiconductor light emitting element regions on a substrate, forming a recess portion between the plurality of semiconductor light emitting element regions on a surface of the substrate, disposing a light reflective sealing resin on the substrate to cover the plurality of semiconductor light emitting element regions with the sealing resin and to fill the recess portion with a part of the sealing resin that covers the plurality of semiconductor light emitting element regions, removing the substrate, disposing a light transmissive resin on surfaces of the plurality of semiconductor light emitting element regions where the substrate has been removed, and dividing the plurality of semiconductor light emitting element regions into individual pieces, wherein the recess portion includes a first recess portion and one or more second recess portions shallower than the first recess portion.

主权项

1. A method for manufacturing a semiconductor light emitting device comprising steps of:
forming a plurality of semiconductor light emitting element regions on a substrate; forming a recess portion between the plurality of semiconductor light emitting element regions in a surface of the substrate, wherein the recess portion includes a first recess portion and one or more second recess portions shallower than the first recess portion; disposing a light reflective sealing resin so as to cover portions of the plurality of semiconductor light emitting element regions and to fill the recess portion; removing the substrate; disposing a light transmissive resin on surfaces of the plurality of semiconductor light emitting element regions where the substrate has been removed; and dividing the plurality of semiconductor light emitting element regions into individual pieces.