Multiple-junction photoelectric device and its production process

摘要

A multiple-junction photoelectric device includes sequentially, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least one of the elementary photoelectric devices being made of microcrystalline silicon, and a second conducting layer. The first conducting layer has a surface facing the microcrystalline silicon elementary photoelectric device such that the surface:
has a lateral feature size bigger than 100 nm, and a root-element-square roughness bigger than 40 nm,includes inclined elementary surfaces such that α50 is greater than 20°, where α50 is the angle for which 50% of the elementary surfaces of the surface of the first conducting layer have an inclination equal to or less than this angle, andincludes valleys formed between two elementary surfaces and having a radius of curvature smaller than 100 nm.

主权项

1. A multiple-junction photoelectric device comprising, in sequence, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least one of said elementary photoelectric devices being made of microcrystalline silicon, and a second conducting layer, wherein:
the first conducting layer has a surface facing said microcrystalline silicon elementary photoelectric device such that:
said surface has a lateral feature size bigger than 100 nm, and smaller than 1500 nm and a root-means-square roughness bigger than 40 nm, and smaller than 500 nm,said surface comprises inclined elementary surfaces such that α50 is greater than 20° , where α50 is the angle for which 50% of the elementary surfaces of the surface of the first conducting layer have an inclination equal to or less than this angle, andsaid surface comprises valleys being formed between two elementary surfaces and having a radius of curvature smaller than 100 nm, and wherein said microcrystalline silicon elementary photoelectric device comprises, on the incoming light side, a p-type layer being made of at least one silicon alloy SiMx where M is O, C, N, and x>0.1, said p-type layer containing silicon grains.