发明名称 |
Semiconductor device, driver circuit, and display device |
摘要 |
To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film. |
申请公布号 |
US9337343(B2) |
申请公布日期 |
2016.05.10 |
申请号 |
US201414185221 |
申请日期 |
2014.02.20 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;Miyake Hiroyuki;Toyotaka Kouhei |
分类号 |
G09G3/36;G11C19/28;H01L29/786;H01L27/12 |
主分类号 |
G09G3/36 |
代理机构 |
Robinson Intellectual Property Law Office |
代理人 |
Robinson Intellectual Property Law Office ;Robinson Eric J. |
主权项 |
1. A driver circuit comprising:
m pairs of shift register unit and demultiplexer circuit electrically connected to the shift register unit; and n signal lines, wherein m is a natural number of three or more, wherein n is a natural number of four or more, wherein the shift register unit is electrically connected to k signal lines, wherein k is a natural number ranging from one to (n−1), wherein the demultiplexer circuit is electrically connected to l signal lines, wherein l is a natural number ranging from one to (n−3), wherein an output of (m+1)th demultiplexer circuit is input to m-th shift register unit, and wherein an output of (m−1)th demultiplexer circuit is input to the m-th shift register unit. |
地址 |
Kanagawa-ken JP |