发明名称 Semiconductor device, driver circuit, and display device
摘要 To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film.
申请公布号 US9337343(B2) 申请公布日期 2016.05.10
申请号 US201414185221 申请日期 2014.02.20
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Miyake Hiroyuki;Toyotaka Kouhei
分类号 G09G3/36;G11C19/28;H01L29/786;H01L27/12 主分类号 G09G3/36
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A driver circuit comprising: m pairs of shift register unit and demultiplexer circuit electrically connected to the shift register unit; and n signal lines, wherein m is a natural number of three or more, wherein n is a natural number of four or more, wherein the shift register unit is electrically connected to k signal lines, wherein k is a natural number ranging from one to (n−1), wherein the demultiplexer circuit is electrically connected to l signal lines, wherein l is a natural number ranging from one to (n−3), wherein an output of (m+1)th demultiplexer circuit is input to m-th shift register unit, and wherein an output of (m−1)th demultiplexer circuit is input to the m-th shift register unit.
地址 Kanagawa-ken JP
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