Aluminum nitride based semiconductor devices

摘要

Semiconductor structures and techniques are described which enable forming aluminum nitride (AIN) based devices by confining carriers in a region of AIN by exploiting the polar nature of AIN materials. Embodiments of AIN transistors utilizing polarization-based carrier confinement are described.

主权项

1. A semiconductor device, comprising:
a first semiconductor region consisting essentially of AlN; and a second semiconductor region having a graded channel, the second semiconductor region having a graded composition, the graded composition being graded from a first side of the second semiconductor region having a first composition consisting essentially of AlN to a second side of the second semiconductor region having a composition of BwAlxInyGazN, wherein w+x+y+z=1, wherein w is greater than or equal to zero, x is greater than or equal to 0.3, y is greater than or equal to zero, and z is greater than or equal to 0.