Methods of forming a semiconductor circuit element and semiconductor circuit element

摘要

The present disclosure provides a method of forming a semiconductor circuit element and a semiconductor circuit element, wherein the semiconductor circuit element is formed on the basis of a replacement gate process replacing a dummy gate structure of a semiconductor device of the semiconductor circuit element by a gate oxide structure and a gate electrode material, wherein the gate oxide structure comprises a high-k material that is in the ferroelectric phase. In some illustrative embodiments herein, a semiconductor device is provided, the semiconductor device having a gate structure disposed over an active region of a semiconductor substrate. Herein, the gate structure comprises a spacer structure and a dummy gate structure which is replaced by a gate oxide structure and a gate electrode material, wherein the gate oxide structure comprises a ferroelectric high-k material.

主权项

1. A method of forming a semiconductor circuit element, the method comprising:
providing a first semiconductor device having a first gate structure disposed over a first active region which is provided within a semiconductor substrate, said first gate structure comprising a first spacer structure and a first dummy gate structure; providing a second semiconductor device having a second gate structure disposed over a second active region adjacent to said first active region, wherein said second gate structure comprises a second dummy gate electrode material, a second spacer structure and a second gate oxide structure which comprises a TiN layer disposed on a high-k material different from said ferroelectric high-k material; after providing the second semiconductor device, replacing said first dummy gate structure by a first gate oxide structure and a first gate electrode material, wherein said first gate oxide structure comprises a ferroelectric high-k material; and after the replacement of said first dummy gate structure in said first semiconductor device, replacing said second dummy gate electrode material by a second gate electrode material.