发明名称 Focused ion beam apparatus with precious metal emitter surface
摘要 A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.
申请公布号 US9336979(B2) 申请公布日期 2016.05.10
申请号 US201514591843 申请日期 2015.01.07
申请人 HITACHI HIGH-TECH SCIENCE CORPORATION 发明人 Yasaka Anto;Aramaki Fumio;Sugiyama Yasuhiko;Kozakai Tomokazu;Matsuda Osamu
分类号 H01J27/02;H01J37/08;H01J37/305;H01J27/26 主分类号 H01J27/02
代理机构 Adams & Wilks 代理人 Adams & Wilks
主权项 1. A focused ion beam apparatus comprising a gas field ion source, the gas field ion source comprising: an emitter for emitting an ion beam, the surface of the emitter being formed of a precious metal; an ion source chamber containing the emitter; a gas supply unit for supplying nitrogen to the ion source chamber so that the pressure in the ion source chamber is 1.0×10−6 Pa to 1.0×10−2 Pa; an extracting electrode to which a voltage for ionizing the nitrogen and for extracting nitrogen ions is applied; and a temperature control unit for cooling the emitter.
地址 JP