Nonvolatile memory device using variable resistive element

摘要

A nonvolatile memory device utilizes a variable resistive element. The nonvolatile memory device includes a plurality of banks and first to third write global bit lines arranged to cross the plurality of banks. Each of the plurality of banks includes a plurality of nonvolatile memory cells using resistive material. The first, the second and the third write global bit lines are disposed directly adjacent to one another in order. When a write current is supplied to the first write global bit line during a write period, a fixed voltage is applied to the second write global bit line while the third global bit line floats.

主权项

1. A nonvolatile memory device comprising:
a plurality of banks including a plurality of nonvolatile memory cells, each nonvolatile memory cell being formed with resistive material; and first to third write global bit lines arranged to cross the plurality of banks and disposed directly adjacent to one another in order, wherein when a write current is supplied to the first write global bit line during a write period, a fixed voltage is applied to the second write global bit line and the third write global bit line floats, and wherein the write period is a read while write (RWW) period.