| 发明名称 | Semiconductor devices and methods of fabricating the same | ||
| 摘要 | Semiconductor devices may include a substrate including an active region defined by a device isolation layer, source/drain regions in the active region, word lines extending in a first direction parallel to the active region and being arranged in a second direction crossing the first direction, a bit line pattern extending in the second direction and crossing over a portion of the active region positioned between the word lines, and a graphene pattern covering at least a portion of the bit line pattern. | ||
| 申请公布号 | US9337149(B2) | 申请公布日期 | 2016.05.10 |
| 申请号 | US201514681313 | 申请日期 | 2015.04.08 |
| 申请人 | Samsung Electronics Co, Ltd. | 发明人 | Im Dong-Hyun;Park Hyun;Lee Soongun;Lee Chang Seok;Kim Sangwon;Park Seongjun;Shin Hyeon Jin;Lim Hanjin |
| 分类号 | H01L27/02;H01L23/532;H01L27/108;H01L23/528;H01L21/02;H01L21/3213;H01L29/06;H01L21/768 | 主分类号 | H01L27/02 |
| 代理机构 | Myers Bigel & Sibley, P.A. | 代理人 | Myers Bigel & Sibley, P.A. |
| 主权项 | 1. A semiconductor device, comprising: a substrate comprising an active region defined by a device isolation layer; source/drain regions in the active region; word lines that extend in a first direction parallel to the active region and that are arranged in a second direction crossing the first direction; a bit line pattern that extends in the second direction and that crosses over a portion of the active region positioned between the word lines; and a graphene pattern that covers at least a portion of the bit line pattern. | ||
| 地址 | KR | ||