Semiconductor light-emitting device

摘要

A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

主权项

1. A semiconductor light-emitting device, comprising:
a transparent substrate; a semiconductor stack formed on the transparent substrate, and comprising a first semiconductor layer, and a second semiconductor layer, wherein the second semiconductor layer is closer to the transparent substrate than the first semiconductor layer is to the transparent substrate; a reflective layer formed on the first semiconductor layer; a plurality of conductive vias extending from a surface of the first semiconductor layer to a surface of the second semiconductor layer; a connecting layer formed in the plurality of conductive vias and on the surface of the first semiconductor layer; a first pad portion formed on the semiconductor stack; and a second pad portion formed on the semiconductor stack, wherein a shortest distance between two of the plurality of conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.