发明名称 |
Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element |
摘要 |
A method for manufacturing a sapphire substrate in which a plurality of projections are formed on a C-plane of the sapphire substrate by etching, includes: forming a patterned etching mask on the C-plane of the sapphire substrate; etching the sapphire substrate until the projections are formed, wherein each of the projections formed by the etching has a substantially triangular pyramidal-shape and has a plurality of side surfaces, a pointed top and a bottom, wherein the bottom of each of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides. The projections are arranged on vertexes of a triangular lattice, and an orientation of the bottom of the projections conforms with an orientation that is rotated by about 30 degrees from an orientation of a triangle of the triangular lattice; and removing the etching mask from the sapphire substrate. |
申请公布号 |
US9337390(B2) |
申请公布日期 |
2016.05.10 |
申请号 |
US201514593728 |
申请日期 |
2015.01.09 |
申请人 |
NICHIA CORPORATION |
发明人 |
Sako Naoya;Ohara Takashi;Inoue Yoshiki;Shibutani Yuki;Kawauchi Yoshihito;Takeichi Kazuyuki;Nagahama Yasunori |
分类号 |
H01L33/32;C30B25/18;C30B29/20;C30B29/40;C30B33/08;C30B33/10;C30B33/12;H01L21/308;H01L21/02;H01L33/24 |
主分类号 |
H01L33/32 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP |
主权项 |
1. A method for manufacturing a sapphire substrate in which a plurality of projections are formed on a C-plane of the sapphire substrate by etching, comprising:
forming a patterned etching mask on the C-plane of the sapphire substrate; etching the sapphire substrate until the projections are formed, wherein each of the projections formed by the etching has a substantially triangular pyramidal-shape and has a plurality of side surfaces, a pointed top and a bottom, wherein the bottom of each of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the plurality of side surfaces has a substantially triangular shape having vertexes located at the top of the projections and at both ends of a respective side of the bottom of the projections, and wherein the projections are arranged on vertexes of a triangular lattice, and an orientation of the bottom of the projections conforms with an orientation that is rotated by about 30 degrees from an orientation of a triangle of the triangular lattice; and removing the etching mask from the sapphire substrate. |
地址 |
Anan-Shi JP |