Method for FinFET device

摘要

Provided is a method of forming a fin field effect transistor (FinFET). The method includes forming a fin on a substrate, the fin having a channel region therein. The method further includes forming a gate structure engaging the fin adjacent to the channel region and forming a spacer on sidewalls of the gate structure. The method further includes forming two recesses in the fin adjacent to the spacer and on opposite sides of the gate structure and epitaxially growing a solid phase diffusion (SPD) layer in the two recesses, the SPD layer containing a high concentration of a dopant. The method further includes performing an annealing process thereby diffusing the dopant into the fin underneath the spacer and forming lightly doped source/drain (LDD) regions therein. The LDD regions have substantially uniform dopant concentration on top and sidewalls of the fin.

主权项

1. A method of forming a fin field effect transistor (FinFET), the method comprising:
forming a fin on a substrate, the fin having a channel region therein; forming a gate structure engaging the fin adjacent to the channel region; forming a spacer on sidewalls of the gate structure; forming two recesses in the fin, the two recesses being adjacent to the spacer and on opposite sides of the gate structure; epitaxially growing a solid phase diffusion (SPD) layer in the two recesses, the SPD layer containing a first concentration of a dopant; and performing an annealing process thereby diffusing the dopant into the fin underneath the spacer and forming lightly doped source/drain (LDD) regions therein.