Contact structure of semiconductor device

摘要

The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a cavity below the major surface; a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; a Ge-containing dielectric layer over the strained material; and a metal layer over the Ge-containing dielectric layer.

主权项

1. A method comprising:
forming a strained material in a cavity of a substrate, the cavity being below a major surface of the substrate, a lattice constant of the strained material being different from a lattice constant of the substrate; epitaxially growing a Ge layer over the strained material; treating the Ge layer to form a Ge-containing dielectric layer over the strained material; and forming a metal layer over the Ge-containing dielectric layer.