Silicon carbide semiconductor device having junction barrier Schottky diode

摘要

A silicon carbide semiconductor device includes a junction barrier Schottky diode including a substrate, a drift layer, an insulating film, a Schottky barrier diode, and a plurality of second conductivity type layers. The Schottky barrier diode includes a Schottky electrode and an ohmic electrode. A PN diode is configured by the plurality of second conductivity type layers and the drift layer, and the plurality of second conductivity type layers is formed in stripes only in a direction parallel to a rod-shaped stacking fault.

主权项

1. A silicon carbide semiconductor device having a junction barrier Schottky diode, comprising:
a substrate including a main front surface and a rear surface, and made of silicon carbide of a first conductivity type having an off angle; a drift layer formed on the main front surface of the substrate, and made of silicon carbide of the first conductivity type which is lower in impurity concentration than the substrate; an insulating film arranged on the drift layer, and having an opening in a cell portion of the drift layer; a Schottky barrier diode including a Schottky electrode that is formed in the cell portion and is formed to come in Schottky contact with a surface of the drift layer through the opening of the insulating film, and an ohmic electrode that is formed on the rear surface of the substrate; and a plurality of second conductivity type layers formed below a region of the Schottky electrode which comes in contact with the drift layer so as to be connected to the Schottky electrode on the surface of the drift layer, and arranged to be spaced apart from each other, wherein a PN diode is configured by the plurality of second conductivity type layers and the drift layer, and the plurality of second conductivity type layers is formed in stripes only in a direction parallel to a rod-shaped stacking fault.