发明名称 Compound semiconductor structure
摘要 A semiconductor structure comprises a substrate comprising a first crystalline semiconductor material, a dielectric layer, above the substrate, defining an opening, a second crystalline semiconductor material at least partially filling the opening, and a crystalline interlayer between the substrate and the second crystalline semiconductor material. The first crystalline semiconductor material and the second crystalline semiconductor material are lattice mismatched, and the crystalline interlayer comprises an oxygen compound. A method for fabricating semiconductor structure comprises the steps of providing a substrate including a first crystalline semiconductor material, patterning an opening in a dielectric layer above the substrate, the opening having a bottom, forming a crystalline interlayer on the substrate at least partially covering the bottom, and growing a second crystalline semiconductor material on the crystalline interlayer thereby at least partially filling the opening. The crystalline semiconductor materials are lattice mismatched, and the crystalline interlayer comprises an oxygen compound.
申请公布号 US9337265(B2) 申请公布日期 2016.05.10
申请号 US201414467660 申请日期 2014.08.25
申请人 GLOBALFOUNDRIES INC. 发明人 Abel Stefan;Czornomaz Lukas;Fompeyrine Jean;El Kazzi Mario
分类号 H01L29/06;H01L29/267;H01L29/165;H01L21/02;H01L21/8258 主分类号 H01L29/06
代理机构 Scully Scott Murphy and Presser 代理人 Scully Scott Murphy and Presser
主权项 1. A semiconductor structure comprising: a substrate comprising a first crystalline semiconductor material; a dielectric layer, above the substrate, defining an opening, wherein the opening includes non-crystalline sidewalls; a second crystalline semiconductor material at least partially filling the opening; a crystalline interlayer between the substrate and the second crystalline semiconductor material, wherein the non-crystalline sidewalls extend continuously from an uppermost surface of the substrate to above the crystalline interlayer all the way to an uppermost surface of the second crystalline semiconductor material, and wherein the uppermost surface of the second crystalline semiconductor material is coplanar with an uppermost surface of the opening wherein: the first crystalline semiconductor material and the second crystalline semiconductor material are lattice mismatched; and the crystalline interlayer comprises an oxygen compound.
地址 Grand Cayman KY