Semiconductor device including a semiconductor sheet unit interconnecting a source and a drain

摘要

A semiconductor device includes a substrate, a first source/drain (S/D), a second S/D, and a semiconductor sheet unit. The substrate extends in a substantially horizontal direction. The first S/D is formed on the substrate. The second S/D is disposed above the first S/D. The semiconductor sheet unit extends in a substantially vertical direction and interconnects the first S/D and the second S/D. A method for fabricating the semiconductor device is also disclosed.

主权项

1. A semiconductor device comprising:
a substrate extending in a substantially horizontal direction; a source unit including a plurality of sources; a drain unit including a plurality of drains, wherein one of the source unit and the drain unit is formed on the substrate; a semiconductor sheet unit extending in a substantially vertical direction and interconnecting the source unit and the drain unit; and a nanowire unit extending in the substantially vertical direction, interconnecting the source unit and the drain unit, and having a cross-sectional shape of a dot in a top view.