Semiconductor device

摘要

[Problem] To provide a semiconductor device in which it is possible to lessen the local concentration of an electric field on a termination structure.;[Solution] The semiconductor device (1) comprises: an n-type SiC substrate (2) having an active region (3); a p-type termination structure (4) formed along the outer periphery of the active region (3), and a source electrode (14) that is formed on the SiC substrate (2) with an interlayer film (12) therebetween, and that selectively penetrates the interlayer film (12) and is connected to the termination structure (4). The termination structure (4) forms a second side (42) that has a relatively high dielectric breakdown strength, and a first side (41) that has a relatively low dielectric breakdown strength compared to the second side (42). The shape of the second side (42) and the shape of the first side (41) are asymmetrical.

主权项

1. A semiconductor device comprising: a first conductive-type semiconductor layer having an active region in which a semiconductor element is formed;
a second conductive-type termination structure that is formed along an outer circumference of the active region on a surface portion of the semiconductor layer; and an upper electrode over the semiconductor layer with an insulating film being interposed therebetween, the upper electrode selectively penetrating the insulating film such that the upper electrode is connected to the termination structure, wherein the termination structure has a high-strength region in which dielectric breakdown strength is relatively high and a low-strength region in which dielectric breakdown strength is relatively lower than the high-strength region, and the shape of the high-strength region and the shape of the low-strength region are asymmetrical to each other.