Semiconductor memory array with air gaps between adjacent gate structures and method of manufacturing the same

摘要

A method of manufacturing a semiconductor device is provided. Gate structures are formed on a substrate, and a first dielectric layer having grooves is formed between two adjacent gate structures. An upper surface of the first dielectric layer is lower than an upper surface of the gate structures. Afterwards, an intermediate layer is formed to cover the gate structures, the first dielectric layer, and the grooves, and openings are formed therein. Each opening is formed between two adjacent gate structures, and the first dielectric layer is removed through the opening. Next, a second dielectric layer is formed on the intermediate layer, so as to define an air gap between two adjacent gate structures. Furthermore, a semiconductor device is provided.

主权项

1. A semiconductor device, comprising:
a plurality of gate structures disposed on a substrate; an intermediate layer disposed on the gate structures and above the substrate between two adjacent gate structures, wherein the intermediate layer comprises: a first intermediate material layer disposed on a surface and sidewalls of each of the gate structures; and a second intermediate material layer disposed on the first intermediate material layer, wherein a material of the second intermediate material layer comprises silicon nitride, and a material of the first intermediate material layer comprises silicon oxide; and a dielectric layer disposed on the intermediate layer, wherein an air gap is formed between two adjacent gate structures, and the air gap comprises: a main space defined by the sidewalls of two adjacent gate structures, a surface of the substrate, and the intermediate layer; and a protruding space located on the main space, defined by the intermediate layer and the dielectric layer, and protrudes into the dielectric layer.