Electrostatic discharge protection circuit

摘要

An electrostatic discharge (ESD) protection circuit includes a substrate, a semiconductor layer provided on the substrate to have a first conductivity type, a first well provided in a first region of the semiconductor layer to have a second conductivity type, an insulating pattern provided in the first well to cross the first well, and first and second doped regions provided in an upper portion of the first well to have the first conductivity type. The first and second doped regions may be laterally spaced apart from each other with the insulating pattern interposed therebetween.

主权项

1. An electrostatic discharge (ESD) protection circuit, comprising:
a substrate; a semiconductor layer covering a top surface of the substrate and having a first conductivity type; at least one well in a first region of the semiconductor layer, each said at least one well having a second conductivity type different from the first conductivity type and extending downwardly from a top surface of the semiconductor layer; an insulating pattern extending in an upper portion of the at least one well; and a first doped region and a second doped region in the upper portion of the at least one well, the first and second doped regions having the first conductivity type; a doped region between the first doped region and the insulating pattern, the doped region having the second conductivity type, wherein the first and second doped regions are laterally spaced apart from each other with the insulating pattern interposed therebetween, and the at least one well and the second doped region contact each other to constitute a Zener diode, whereby the Zener diode discharges holes to a region outside the circuit through the doped region between the first doped region and the insulating pattern.