LIGHT EMITTING DIODES WITH GRAPHENE ELECTRODES AND MANUFACTURING METHODS THEREFORE

摘要

The present invention relates to a light emitting diode using reduced graphene oxide in an electrode structure, wherein the reduced graphene oxide is formed in a lower part of an n-type semiconductor layer and performs an operation of diffusing a current to a layer to supply electrons. In addition, heat discharge effect is improved by using the reduced graphene oxide.