| 发明名称 |
METHOD OF MANUFACTURING HEAT-RESISTANT METAL-SI CONTACT SYSTEMS |
| 摘要 |
A method of manufacturing heat-resistant metal-Si contact systems consists of cleaning the surface of a silicon substrate, magnetron sputtering contact-forming layer and diffusion barrier TiB2 with a thickness of 60÷100 nm, and the external contact layer on heated to 100÷150 °C Si substrate. As contact-forming layer is applied a layer of Ti with a thickness of 10÷30 nm, and is applied to the additional layer of diffusion Ti barrier with a thickness of 20÷40 nm, and as an external contact layer of gold with a thickness of 100÷150 nm. |
| 申请公布号 |
UA106825(U) |
申请公布日期 |
2016.05.10 |
| 申请号 |
UA20150010732U |
申请日期 |
2015.11.03 |
| 申请人 |
V. LASHKARIOV SEMICONDUCTOR PHYSICS INSTITUTE OF THE NATIONAL ACADEMY OF SCIENCIS OF UKRAINE |
发明人 |
BELIAIEV OLEKSANDR YEVHENOVYCH;BOLTOVETS MYKOLA SYLOVYCH;KONAKOVA RAISA VASYLIVNA;KUDRYK YAROSLAV YAROSLAVOVYCH;KOROSTYNSKA TAMARA VASYLIVNA;ATAUBAIEVA AKUMYS BERYSBAIVNA;VYNOHRADOV ANATOLII OLEHOVYCH |
| 分类号 |
H01L21/268 |
主分类号 |
H01L21/268 |
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