| 摘要 |
According to one embodiment, an EUV exposure apparatus includes a mirror which reflects an EUV light beam irradiated from a light source and a wafer stage which is irradiated with the EUV light beam reflected by the mirror. When exposure of a first wafer is to be performed, the first wafer is mounted on the wafer stage, and the wafer stage allows the first wafer to be irradiated with the EUV light beam. In addition, when cleaning of the mirror is to be performed, the EUV light beam is reflected by a reflection substrate, and the wafer stage allows the mirror to be irradiated with the reflected light beam. |
| 主权项 |
1. An EUV exposure apparatus comprising:
a mirror which reflects an EUV light beam irradiated from a light source; and a wafer stage which is irradiated with the EUV light beam reflected by the mirror, wherein, when exposure of a first wafer is to be performed, the first wafer is mounted on the wafer stage, and the wafer stage allows the first wafer to be irradiated with the EUV light beam, and wherein, when cleaning of the mirror is to be performed, the EUV light beam is reflected by a reflection substrate that is formed on the wafer stage, and the wafer stage is movable to a position where the reflection substrate formed on the wafer stage is irradiated with the EUV light beam, and the mirror is irradiated with the reflected EUV light beam from the reflection substrate, and wherein the reflection substrate includes: a multilayered film which reflects the EUV light beam; and a diffraction pattern which is disposed in an upper layer from the multilayered film to diffract the EUV light beam, and the diffraction pattern is formed to have plural pattern widths so that the EUV light beam is reflected at plural angles. |
