| 发明名称 | Positive resist composition and patterning process | ||
| 摘要 | A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group and recurring units of tert-butyl or tert-amyl-substituted hydroxyphenyl methacrylate and having a weight average molecular weight of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure. | ||
| 申请公布号 | US9335632(B2) | 申请公布日期 | 2016.05.10 |
| 申请号 | US201414330272 | 申请日期 | 2014.07.14 |
| 申请人 | SHIN-ETSU CHEMICAL CO., LTD. | 发明人 | Hatakeyama Jun;Hasegawa Koji |
| 分类号 | G03F7/004;G03F7/038;G03F7/039;G03F7/38;G03F7/20;C08F220/18;C08F220/30;C08F220/22;C08F220/62 | 主分类号 | G03F7/004 |
| 代理机构 | Westerman, Hattori, Daniels & Adrian, LLP | 代理人 | Westerman, Hattori, Daniels & Adrian, LLP |
| 主权项 | 1. A positive resist composition comprising a polymer comprising recurring units having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group and recurring units represented by the general formula (1), and having a weight average molecular weight of 1,000 to 500,000 as a base resin,wherein R1 is hydrogen or methyl, R2 is hydrogen or methyl, m and n each are 1 or 2. | ||
| 地址 | Tokyo JP | ||