Method for manufacturing contact holes of a semiconductor device

摘要

The present invention provides a method for manufacturing contact holes of a semiconductor device, including a first dielectric layer is provided, a first region and a second region are defined on the first dielectric layer respectively, at least two cutting hard masks are formed and disposed within the first region and the second region respectively, at least two step-height portions disposed right under the cutting hard masks respectively. Afterwards, at least one first slot opening within the first region is formed, where the first slot opening partially overlaps the cutting hard mask and directly contacts the cutting hard mask, and at least one second contact opening is formed within the second region, where the second contact opening does not contact the cutting hard mask directly, and at least two contact holes are formed, where each contact hole penetrates through each step height portion.

主权项

1. A method for manufacturing contact holes of a semiconductor device, comprising:
providing a first dielectric layer, a first region and a second region being defined on the first dielectric layer; forming at least one first cutting hard mask on the first dielectric layer, disposed within the first region, and forming at least one second cutting hard mask on the first dielectric layer, disposed within the second region; etching the first dielectric layer, so as to form at least one first step-height portion disposed right below the at least one first cutting hard mask, and etching the first dielectric layer, so as to form at least one second step-height portion disposed right below the at least one second cutting hard mask; forming at least one first slot opening within the first region, wherein the at least one first slot opening partially overlaps the at least one first cutting hard mask and directly contacts the at least one first cutting hard mask, and forming at least one second contact opening within the second region, wherein the at least one second contact opening does not contact the at least one second cutting hard mask directly; and forming at least one first contact hole within the first region, wherein the at least one first contact hole penetrates through the at least one first step-height portion, and forming at least one second contact hole within the second region, wherein the at least one second contact hole penetrates through the at least one second step-height portion.