发明名称 |
Bipolar transistor, band-gap reference circuit and virtual ground reference circuit |
摘要 |
The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a band-gap reference circuit, virtual ground reference circuit and double band-gap reference circuit with the bipolar transistor. The bipolar transistor includes: a Silicon-On-Insulator wafer; a base area, an emitter area and a collector area; a base area gate dielectric layer on a top silicon layer and atop the base area; a base area control-gate on the base area gate dielectric layer; an emitter electrode connected to the emitter area via a first contact; a collector electrode connected to the collector area via a second contact; and a base area control-gate electrode connected to the base area control-gate via a third contact. Processes of forming the bipolar transistor are fully compatible with traditional standard CMOS processes; and the base current to turn on the bipolar transistor is based on the GIDL current and formed by applying a voltage to the base area control-gate electrode without any need of contact to the base. |
申请公布号 |
US9337324(B2) |
申请公布日期 |
2016.05.10 |
申请号 |
US201414463583 |
申请日期 |
2014.08.19 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION |
发明人 |
Chi Min-Hwa;Ching Lihying;Xiao Deyuan |
分类号 |
H01L21/8228;H01L29/739;G05F3/30;H01L21/84;H01L27/082;H01L27/12;H01L29/66;H01L29/73;H01L21/265;H01L29/08;H01L29/10;H03K17/60 |
主分类号 |
H01L21/8228 |
代理机构 |
Anova Law Group, PLLC |
代理人 |
Anova Law Group, PLLC |
主权项 |
1. A method for operating a bipolar transistor, wherein the bipolar transistor comprises a substrate, an emitter, a collector, a base located between the emitter and the collector, a dielectric layer overlapping atop the base, and a gate structure on the dielectric layer, and wherein the base is disposed between the emitter and the collector, a conductivity type of the emitter is the same as that of the collector, and a conductivity type of the base is opposite to that of the emitter and the collector, the method comprising:
applying a first voltage to the emitter; applying a second voltage to the collector; and applying a third voltage to the gate structure with respect to the first voltage and the second voltage in order to ensure a current flow induced by minority carriers flowing from the collector into the base as a result of the bias between the third voltage and the second voltage, and further said current or a portion thereof continues to flow from the base into the emitter as a result of the bias between the first voltage and the third voltage. |
地址 |
Beijing CN |