MEMS device and formation method thereof

摘要

The present disclosure provides MEMS devices and their fabrication methods. A first dielectric layer is formed on a first substrate including integrated circuits therein. One or more first metal connections and second metal connections are formed in the first dielectric layer and are electrically connected to the integrated circuits. A second dielectric layer is formed on the first dielectric layer. An acceleration sensor is formed in the second dielectric layer to electrically connect to the one or more first metal connections. A second substrate is bonded to the second dielectric layer. One or more first metal vias are formed in the second substrate and in the second dielectric layer to electrically connect to the second metal connections. A pressure sensor is formed on the second substrate to electrically connect to the first metal vias.

主权项

1. A method for forming a MEMS device, comprising:
providing a first substrate including integrated circuits therein; forming a first dielectric layer on the first substrate; forming one or more first metal connections and second metal connections in the first dielectric layer, wherein the first metal connections and the second metal connections are electrically connected to the integrated circuits; forming a second dielectric layer on the first dielectric layer; forming an acceleration sensor in the second dielectric layer, the acceleration sensor being electrically connected to the one or more first metal connections; providing a second semiconductor substrate and bonding the second semiconductor substrate to the second dielectric layer; forming one or more first metal vias in the second semiconductor substrate and in the second dielectric layer, the first metal vias being electrically connected to the second metal connections; and forming a pressure sensor directly on the second semiconductor substrate, the pressure sensor being electrically connected to the first metal vias, wherein the pressure sensor overlaps with the acceleration sensor in a vertical plane, and the second semiconductor substrate is between the pressure sensor and the acceleration sensor.