| 摘要 |
Provided is a manufacturing method of substrate grown graphene, which grows graphene on a substrate. The manufacturing method of substrate grown graphene comprises the following steps of: (1) arranging a metal layer on a substrate; (2) providing carbon-containing gas and etching gas, and conducting plasma-enhanced chemical vapor deposition (PECVD); (3) supplying etching gas for metal when supplying the carbon-containing gas, and growing graphene on the metal layer; and (4) continuously conducting PECVD from the proces of the step (3), and growing graphene on the substrate without including the metal layer by continuously removing all of metal in the metal layer by etching gas. |
