| 摘要 |
PROBLEM TO BE SOLVED: To reduce a used amount of reaction gas, and further to reduce production cost of a semiconductor device.SOLUTION: In a production method of a semiconductor device in an embodiment, deposition is carried out by setting a flow rate of reaction gas at a first flow rate, in a first state in which the surface of a semiconductor substrate which is a deposition object has a first surface area. A change is detected, which is from the first state to a second state having a second surface area which is different from the first surface area, on the surface of the semiconductor substrate which is the deposition object, and the flow rate of the reaction gas is set at a second flow rate which is different from the first flow rate, and then deposition is carried out.SELECTED DRAWING: Figure 1 |
