NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

Disclosed are a nitride semiconductor light emitting device with an excellent crystalline attribute and a brightness property and a manufacturing method of the same. According to the present invention, the nitride semiconductor light emitting device comprises: a substrate having a surface with an uneven pattern; silica formed on the substrate and as a type of a particle to expose a portion of the substrate; a lower nitride semiconductor layer arranged on the silica and the exposed substrate surface; and a multi-layer light emitting structure formed on the lower nitride semiconductor layer and including a first conductivity-type nitride semiconductor layer, a second conductivity-type nitride semiconductor layer, and an active layer.