| 摘要 |
PROBLEM TO BE SOLVED: To improve throughput in a manufacturing process of a semiconductor device while improving performance of the semiconductor device.SOLUTION: An insulating film part IFP comprising an insulating film IF1, a charge storage film EC1, an insulating film IFE, a charge storage film EC2, and an insulating film IF2 is formed on a semiconductor substrate SB. The charge storage film EC1 contains silicon and nitrogen, the insulating film IFE contains silicon and oxygen, and the charge storage film EC2 contains silicon and nitrogen. The thickness of the insulating film IFE is smaller than that of the charge storage film EC1, and the thickness of the charge storage film EC2 is larger than that of the charge storage film EC1. The insulating film IFE is formed by treating an upper surface of the charge storage film EC1 using a treatment liquid containing water.SELECTED DRAWING: Figure 15 |
