| 摘要 |
Methods for easily manufacturing nanowire structures such as one or more nanowire field-effect transistors are proposed. According to an embodiment, the method comprises the steps of: providing a substrate; providing first material layers and second material layers on the substrate, wherein the first material layers intersect the second material layers; removing portions of the first material layers and the second material layers, wherein the removing operation includes forming a plurality of nanowire stacks including first material nanowires and second material nanowires; removing the first material nanowires from at least one nanowire stack; and removing the second material nanowires from at least another nanowire stack. The at least one nanowire stack and the at least another nanowire stack include P-type nanowire stack(s) and N-type nanowire stack(s), respectively. |
