METHOD FOR GROWING NITRIDE-BASED SEMICONDUCTOR WITH HIGH QUALITY

摘要

PROBLEM TO BE SOLVED: To drastically reduce threading dislocations due to lattice mismatch at the interface between a substrate and a nitride-based semiconductor, reduce a process failure rate, and minimize defects in a thin film, thereby securing the reliability of an optical element.SOLUTION: A method for growing a nitride-based semiconductor with high quality includes the steps of: forming a first mask layer 200a on a substrate 100 and forming a second mask layer 200b on the first mask layer 200a; performing dry etching on the first mask layer 200a and the second mask layer 200b to form a region in which a part of the substrate 100 is opened; performing selective wet etching on the first mask layer 200a in the opened region to form a recessed region in which a part of the substrate is exposed; forming a third mask layer 200c in the recessed region; and growing a nitride-based semiconductor 500 from the exposed part of the substrate on sides of the third mask layer 200c to expand the growth to the opened region.SELECTED DRAWING: Figure 1f